DocumentCode
2915850
Title
Enhanced current gain in SiC power BJTs using surface accumulation layer transistor (SALTran) concept
Author
Kumar, M. Jagadesh ; Parihar, Vinod
Author_Institution
Dept. of Electr. Eng., Indian Inst. of Technol., New Delhi, India
Volume
D
fYear
2004
fDate
21-24 Nov. 2004
Firstpage
199
Abstract
SiC bipolar transistors often suffer from poor current gain due to low carrier lifetimes. In this paper, we demonstrate that the current gain of SiC power bipolar transistors can be improved by as large as 100 % by using a novel surface accumulation layer transistor (SALTran) concept in which a reflecting boundary in the emitter reduces the base current. The reasons for the improved current gain are explained based on simulation results.
Keywords
power bipolar transistors; silicon compounds; wide band gap semiconductors; BJT; SiC; current gain; power bipolar transistors; surface accumulation layer transistor; Bipolar transistors; Charge carrier lifetime; Doping; Electron emission; Magnesium; Photonic band gap; Semiconductor-metal interfaces; Silicon carbide; Temperature; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
TENCON 2004. 2004 IEEE Region 10 Conference
Print_ISBN
0-7803-8560-8
Type
conf
DOI
10.1109/TENCON.2004.1414903
Filename
1414903
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