A novel double-side CMOS-MEMS post processing for monolithic sensor integration

This study presents a novel double-side CMOS post-process to monolithically integrate various capacitance type CMOS sensors on a single chip. In applications, the pressure sensor and linear accelerometer have been realized and monolithic integrated using the TSMC 2P4M process and the present post-process. The measurement results show that sensitivities (non-linearity) of the pressure sensor and the accelerometer are 12 mV/kPa (4.77%), and 3.9 mV/G (1.06%), respectively. The measurement ranges are 0~10 kPa, and 0.3~6 G, respectively.