A Polar Modulated CMOS Class-E Amplifier with a Class-F Driver Stage

Author

Tsou, Wen-An ; Wuen, Wen-Shen ; Wen, Kuei-Ann

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

3

fYear

2009

fDate

21-22 Nov. 2009

Firstpage

658

Lastpage

661

Abstract

This work presents a fully integrated polar modulated CMOS class-E amplifier in a 0.18 Â¿m CMOS process. The amplifier using the device-stacking topology is implemented with a self-biased control circuit, which allows the stacked device operating as a resistance, for linearizing the AM-AM and AM-PM distortion. The simulation result shows that the AM-PM distortion is reduced from 18 degrees to 3 degrees. The linearized class-E amplifier with the class-F driver stage can provide the maximum power gain of 21 dB, the maximum output power of 17 dBm, and the peak power-added efficiency (PAE) of 30% from the supply voltage of 2 V.

Keywords

CMOS integrated circuits; amplifiers; AM-AM distortion; AM-PM distortion; CMOS process; class-F driver stage; device-stacking topology; gain 21 dB; linearized class-E amplifier; polar modulated CMOS class-E amplifier; self-biased control circuit; voltage 2 V; CMOS process; CMOS technology; Driver circuits; Inductors; Nonlinear distortion; Phase distortion; Power amplifiers; Power generation; Radiofrequency amplifiers; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Intelligent Information Technology Application, 2009. IITA 2009. Third International Symposium on

Conference_Location

Nanchang

Print_ISBN

978-0-7695-3859-4

Type

conf

DOI

10.1109/IITA.2009.403

Filename

5369415