Title :
Single-mode vertical-cavity surface-emitting laser
Author :
Koch, B. ; Zhang, X. ; Olson, D. ; Leger, J. ; Gopinath, A.
Author_Institution :
Dept. of Electr. & Comput. Eng., Minnesota Univ., Minneapolis, MN, USA
Abstract :
Summary form only given. Numerous approaches have attempted to increase the single-transverse-mode output power of vertical-cavity surface-emitting lasers (VCSELs). These include external cavity, lossy or anti-guiding, and filtering approaches. For the purpose of commercial production, a monolithic, continuous wave (cw) device incorporating a lossless filter approach is desirable.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optics; laser modes; optical waveguide filters; quantum well lasers; surface emitting lasers; InGaAs; InGaAs MQW lasers; VCSEL; external cavity; lossless filter approach; monolithic continuous wave device; optical waveguide filter; single-mode vertical-cavity surface-emitting laser; single-transverse-mode output power; Absorption; Costs; Lattices; Microcavities; Mirrors; Optical resonators; Semiconductor diodes; Semiconductor lasers; Surface emitting lasers; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics, 2000. (CLEO 2000). Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-634-6
DOI :
10.1109/CLEO.2000.906651