Q-switched Yb/sup 3+/:Sr/sub 5/(PO/sub 4/)/sub 3/F three-level laser operation at 985 nm and efficient doubling at 492.5 nm

Summary form only given. Yb-doped Sr/sub 5/(PO/sub 4/)/sub 3/F (S-FAP) has already been demonstrated as an ideal laser material for medium power applications in a diode-pumped solid-state laser oscillator and high repetition rate amplifier system. Ytterbium has a simple electronic structure in the near infrared leading to a low quantum defect, excited state absorption, and nonradiative decay. S-FAP lasers at 985 nm can be efficiently pumped by diodes at 900 nm and have the added advantage of a low quantum defect (0.09) yielding efficient diode pumped operation. In addition, the advent of an efficient diode-pumped, doubled S-FAP laser at 492.5 nm represents an attractive blue light source.