Title :
Photoluminescence of Zinc Oxide nanofibers synthesis by novel gas blocker in thermal CVD method
Author :
Sahdan, M.Z. ; Mamat, M.H. ; Salina, M. ; Khusaimi, Z. ; Noor, U.M. ; Rusop, M.
Author_Institution :
Fac. of Electr. Eng., Univ. Teknol. MARA, Shah Alam, Malaysia
Abstract :
Zinc Oxide (ZnO) nanofibers have received broad attention for their wide high technological applications such as for nanosensors, thin film transistors and optoelectronic devices. In this paper, a novel ZnO nanofibers synthesis method using gas blocker in thermal CVD was introduced. ZnO nanofibers with diameter varies from approximately 10 to 50 nm were successfully synthesized. The structural properties of the ZnO nanofibers were studied using X-ray diffraction (XRD) and we found that the ZnO nanofibers are crystallized in hexagonal wurtzite structure. The Photoluminesce (PL) spectrum has indicated that the ZnO nanofibers have high emission at UV wavelength. These nanofibers may find applications in a variety of fields such as field emission, photovoltaic, multifunctional nanocomposites, etc. that require not only high surface area but also structural integrity.
Keywords :
II-VI semiconductors; X-ray diffraction; chemical vapour deposition; field emission; nanocomposites; nanofibres; photoluminescence; semiconductor growth; wide band gap semiconductors; zinc compounds; X-ray diffraction; ZnO; hexagonal wurtzite structure; nanosensors; novel gas blocker; photoluminescence; thermal CVD method; thin film transistors; zinc oxide nanofibers synthesis; Crystallization; Nanoscale devices; Optoelectronic devices; Photoluminescence; Photovoltaic systems; Solar power generation; Thin film transistors; X-ray diffraction; X-ray scattering; Zinc oxide; Gas blocker; Photoluminescence (PL); UV wavelength; X-ray diffraction; Zinc Oxide (ZnO);
Conference_Titel :
Electronic Devices, Systems and Applications (ICEDSA), 2010 Intl Conf on
Conference_Location :
Kuala Lumpur
Print_ISBN :
978-1-4244-6629-0
DOI :
10.1109/ICEDSA.2010.5503023