The consequences of annealing temperature to optical and electrical properties of ZnO thin film for FET applications

In this paper, the ZnO thin film has being growth using the TCVD technique. By using glass as a substrate, this thin film being deposited and being annealed at a different temperature. This is done to investigate the consequences of a different annealing temperature to the optical and electrical properties of this thin film. The IV characteristic has been investigated using IV probe measurement system and the optical properties being analyzed by using UV-VIS spectrophotometer. The result shows that the thin film exhibited a very conductive behavior when being annealed at 450°C.