• DocumentCode
    2917960
  • Title

    Preparation of pyrolyzed a-C thin films using methane as precursor

  • Author

    Mohamad, F. ; Hussin, H. ; Noor, U.M. ; Rusop, M.

  • fYear
    2010
  • fDate
    11-14 April 2010
  • Firstpage
    396
  • Lastpage
    400
  • Abstract
    Amorphous carbon thin films have been grown on quartz substrates by an economical and simple technique, thermal CVD system with methane as starting material. Since, the decomposition of methane required high thermal energy, thus the deposition temperatures were varied from 700-1000°C. The formation of a-C thin films and its properties were characterized using UV-Vis Spectrophotometer and Advantest R6243 DC Voltage Current Source/Monitor and SemiPro Curve Software.
  • Keywords
    chemical vapour deposition; semiconductor technology; spectrophotometers; thin film devices; SemiPro curve software; UV-Vis spectrophotometer; advantest R6243 DC voltage current source-monitor; amorphous carbon thin films; methane; precursor; pyrolyzed a-C thin films; semiconductor technology; thermal CVD system; Amorphous materials; Furnaces; Optical films; Plasma temperature; Semiconductor thin films; Sputtering; Substrates; Thermal decomposition; Thin film devices; Transistors; amorphous carbon; methane; pyrolysis; thermal CVD;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Devices, Systems and Applications (ICEDSA), 2010 Intl Conf on
  • Conference_Location
    Kuala Lumpur
  • Print_ISBN
    978-1-4244-6629-0
  • Type

    conf

  • DOI
    10.1109/ICEDSA.2010.5503032
  • Filename
    5503032