DocumentCode
2917960
Title
Preparation of pyrolyzed a-C thin films using methane as precursor
Author
Mohamad, F. ; Hussin, H. ; Noor, U.M. ; Rusop, M.
fYear
2010
fDate
11-14 April 2010
Firstpage
396
Lastpage
400
Abstract
Amorphous carbon thin films have been grown on quartz substrates by an economical and simple technique, thermal CVD system with methane as starting material. Since, the decomposition of methane required high thermal energy, thus the deposition temperatures were varied from 700-1000°C. The formation of a-C thin films and its properties were characterized using UV-Vis Spectrophotometer and Advantest R6243 DC Voltage Current Source/Monitor and SemiPro Curve Software.
Keywords
chemical vapour deposition; semiconductor technology; spectrophotometers; thin film devices; SemiPro curve software; UV-Vis spectrophotometer; advantest R6243 DC voltage current source-monitor; amorphous carbon thin films; methane; precursor; pyrolyzed a-C thin films; semiconductor technology; thermal CVD system; Amorphous materials; Furnaces; Optical films; Plasma temperature; Semiconductor thin films; Sputtering; Substrates; Thermal decomposition; Thin film devices; Transistors; amorphous carbon; methane; pyrolysis; thermal CVD;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Devices, Systems and Applications (ICEDSA), 2010 Intl Conf on
Conference_Location
Kuala Lumpur
Print_ISBN
978-1-4244-6629-0
Type
conf
DOI
10.1109/ICEDSA.2010.5503032
Filename
5503032
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