Microcavity-based semiconductor lasers for near- and deep-UV applications

Author

Bidnyk, S. ; Lam, J.B. ; Little, B.D. ; Kwon, Y.H. ; Song, J.J. ; Bulman, G.E. ; Kong, H.W.

Author_Institution

Center for Laser & Photonics Res., Oklahoma State Univ., Stillwater, OK, USA

fYear

2000

fDate

7-12 May 2000

Firstpage

36

Lastpage

37

Abstract

Summary form only given. We achieved ultraviolet lasing in optically pumped GaN/AlGaN separate confinement heterostructures (SCHs) with remarkably low lasing threshold. Strongly polarized (TE:TM = 300:1) modes were observed over the wavelength range of 358-367 nm. To our knowledge, this is the shortest-wavelength lasing reported to date. The analysis of mode spacing, far-field patterns, and surface morphology indicated that the lasing is due to high-finesse microcavities formed in the active region.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; laser modes; laser transitions; light polarisation; microcavity lasers; semiconductor lasers; surface structure; wide band gap semiconductors; 358 to 367 nm; GaN-AlGaN; active region; deep-UV applications; far-field patterns; high-finesse microcavities; lasing threshold; microcavity-based semiconductor lasers; mode spacing; near-UV applications; optically pumped GaN/AlGaN separate confinement heterostructures; shortest-wavelength lasing; strongly polarized modes; surface morphology; ultraviolet lasing; Aluminum gallium nitride; Gallium nitride; Laser modes; Optical polarization; Optical pumping; Optical surface waves; Pattern analysis; Pump lasers; Semiconductor lasers; Surface morphology;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2000. (CLEO 2000). Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

1-55752-634-6

Type

conf

DOI

10.1109/CLEO.2000.906695

Filename

906695