Fabrication and evaluation of V-shaped MOS transistor probe

The V-shaped metal-oxide-semiconductor (MOS) transistor probe is fabricated and evaluated to detect the surface electric properties. The V-shaped structure is selected for the better lateral stiffness compared with the simple rectangular structure and the specific dimensions are determined using the parallel beam approximation (PBA). The conductive nano tip is grown with the focused-ion-beam (FIB) system, which delivers the electric properties from the sample surface to the MOS transistor. Since the MOS transistor has the high working frequency and the high sensitivity, the device can detect the small electric properties with the high speed. The fabricated device is applied to the various test patterns like the metal lines and PZT poling regions. The results represent the well defined measurement patterns and show the promising aspect of the surface electric property detection with high sensitivity and high working frequency.