Title :
An experiment to improve bipolar gain and bandwidth
Author_Institution :
Technol. Dept., X-FAB Sarawak Sdn. Bhd., Kuching, Malaysia
Abstract :
An experiment in base and pedestal collector implant has been conducted to study the impact and further improve the performance of a 0.6 micron silicon poly emitter bipolar transistor. It has been shown the bandwidth can be improved form 13 GHz to 15GHz with acceptable changes to the other bipolar performances.
Keywords :
bipolar transistors; silicon; Si; base collector implant; bipolar gain; frequency 13 GHz to 15 GHz; pedestal collector implant; poly emitter bipolar transistor; size 0.6 micron; Bandwidth; Bipolar integrated circuits; Bipolar transistors; Breakdown voltage; Degradation; Frequency measurement; Implants; Performance gain; Silicon carbide; Testing; Bandwidth; Poly emitter bipolar; SIC implant;
Conference_Titel :
Electronic Devices, Systems and Applications (ICEDSA), 2010 Intl Conf on
Conference_Location :
Kuala Lumpur
Print_ISBN :
978-1-4244-6629-0
DOI :
10.1109/ICEDSA.2010.5503043
