DocumentCode :
2918223
Title :
Parallel electron beam micro-column with self-aligned carbon nanotube emitters
Author :
Tsai, C.H. ; Ho, J.Y. ; Ono, T. ; Esashi, M.
Author_Institution :
Tohoku Univ., Sendai
fYear :
2008
fDate :
13-17 Jan. 2008
Firstpage :
355
Lastpage :
358
Abstract :
In this paper, we have proposed, fabricated and characterized a parallel electron beam micro-column with single-stranded carbon nanotube (CNT) filed emitters. The integrated micro-column consists of a self-aligned CNT field emitter array (FEA), and a multi-layered electrostatic Si focusing lens array. In our design, the emitters, gate and electrostatic lens array are electrically isolated, and each source can be controlled individually. Electron emission performance of the fabricated CNT/Si emitter was characterized. The best turn-on fields, defined as the field required to generate an emission current of 1 nA, were approximately 6 V. When applying a gate voltage of 100 V, a 110 nA anode current is measured. It is seen that CNT/Si emitter showed low threshold voltage; however, the emission current fluctuation was high during high voltage operation.
Keywords :
anodes; carbon nanotubes; current fluctuations; electrostatic lenses; elemental semiconductors; field emitter arrays; micromechanical devices; nanotube devices; silicon; Si; anode current measurement; current 1 nA; current 110 nA; electron emission performance; emission current fluctuation; high voltage operation; low threshold voltage values; multilayered electrostatic focusing lens array; parallel electron beam microcolumn fabrication; self-aligned carbon nanotube emitters; turn-on fields characterization; voltage 100 V; Anodes; Carbon nanotubes; Current measurement; Electron beams; Electron emission; Electrostatics; Field emitter arrays; Lenses; Optical design; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro Electro Mechanical Systems, 2008. MEMS 2008. IEEE 21st International Conference on
Conference_Location :
Tucson, AZ
ISSN :
1084-6999
Print_ISBN :
978-1-4244-1792-6
Electronic_ISBN :
1084-6999
Type :
conf
DOI :
10.1109/MEMSYS.2008.4443666
Filename :
4443666
Link To Document :
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