DocumentCode
2918488
Title
Submicron HEMT technology
Author
Berroth, M.
Author_Institution
Stuttgart Univ., Germany
fYear
1996
fDate
35384
Firstpage
42401
Lastpage
42405
Abstract
This presentation is concerned with devices and circuits based on GaAs substrates. MESFETs, HEMTs and pseudomorphic HEMTs are promising candidates for large scale integration at very high frequencies of operation
Keywords
gallium arsenide; GaAs; GaAs substrate; MESFET; high frequency operation; large scale integration; pseudomorphic HEMT; submicron HEMT technology;
fLanguage
English
Publisher
iet
Conference_Titel
Advanced Developments in Microelectronic Engineering (Digest No: 1996/235), IEE Colloquium on
Conference_Location
London
Type
conf
DOI
10.1049/ic:19961241
Filename
640873
Link To Document