DocumentCode
2918519
Title
MIOS memory devices and their charge storage properties
Author
Alabdulqader, Hussein Ali ; Abdulkarim, Samah
Author_Institution
Coll. of Eng. & Archit., Univ. of Nizwa, Nizwa, Oman
fYear
2010
fDate
11-14 April 2010
Firstpage
294
Lastpage
296
Abstract
The charge storage of the nonvolatile Metal Insulator Oxide Semiconductor (MIOS) memory devices was studied and investigated using an efficient programming and measuring equipments in order to characterize the MIOS performances. Positive and negative voltages are applied to a device fabricated on a different semiconductor substrate. The time duration for these applied voltages is varied and controlled by a computer. The memorization phenomena of these devices due to flat band voltage shift was observed and studied.
Keywords
MIS devices; random-access storage; MIOS memory devices; charge storage properties; flat band voltage shift; nonvolatile metal insulator oxide semiconductor memory devices; semiconductor substrate; Aluminum; Annealing; Capacitance-voltage characteristics; Channel bank filters; Current measurement; EPROM; Nonvolatile memory; Silicon; Substrates; Voltage; EEPROM; MIOS; Nonvolatile memory; erasing; programming window; writing;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Devices, Systems and Applications (ICEDSA), 2010 Intl Conf on
Conference_Location
Kuala Lumpur
Print_ISBN
978-1-4244-6629-0
Type
conf
DOI
10.1109/ICEDSA.2010.5503056
Filename
5503056
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