DocumentCode :
2918563
Title :
Prediction of fatigue lifetime based on static strength and crack extension law - Fatigue test of mems materials becomes unnecessary
Author :
Kawai, T. ; Amaki, S. ; Gaspar, J. ; Ruther, P. ; Paul, O. ; Kamiya, S.
Author_Institution :
Nagoya Inst. of Technol., Nagoya
fYear :
2008
fDate :
13-17 Jan. 2008
Firstpage :
431
Lastpage :
434
Abstract :
This paper presents a scheme to predict the fatigue lifetime of polycrystalline silicon thin films under cyclic loading. The initial damage was characterized as an equivalent crack distribution from the results of quasi-static tensile tests, i.e., from the distribution of static strength. The fatigue crack extension process determining fatigue lifetime was then estimated by the well-known Paris law with two unknown parameters. These were fit to the results of fatigue tests performed on specimens with two different situations of etching damage. In spite of the difference in static strength, the parameters are consistent among the two cases. This implies that fatigue crack extension law is inherent to the material and that lifetime can be estimated on the basis of static strength.
Keywords :
elemental semiconductors; etching; fatigue cracks; fatigue testing; life testing; micromechanical devices; semiconductor thin films; silicon; stress analysis; tensile strength; tensile testing; MEMS materials; Paris law; Si; cyclic loading condition; equivalent crack distribution; etching damage; fatigue crack extension process; fatigue lifetime prediction; fatigue tests; polycrystalline silicon thin films; quasistatic tensile tests; static strength distribution; Etching; Fatigue; Life estimation; Life testing; Lifetime estimation; Materials testing; Micromechanical devices; Performance evaluation; Silicon; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro Electro Mechanical Systems, 2008. MEMS 2008. IEEE 21st International Conference on
Conference_Location :
Tucson, AZ
ISSN :
1084-6999
Print_ISBN :
978-1-4244-1792-6
Electronic_ISBN :
1084-6999
Type :
conf
DOI :
10.1109/MEMSYS.2008.4443685
Filename :
4443685
Link To Document :
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