Title :
High-performance mid-IR type-II interband cascade lasers
Author :
Hwang, W.-Y. ; Zaitsev, S.V. ; Kuo, C.H. ; Chih-Hsiang Lin ; Um, Jaegwang ; Delaney, A. ; Jun Zheng ; Murry, S.J. ; Liu, An ; Le, H.Q. ; Mu, Yi ; Pei, S.S.
Author_Institution :
Appl. Optoelectron. Inc., Sugar Land, TX, USA
Abstract :
Summary form only given.The wavelengths spanning from 2 to 13 /spl mu/m include the absorption lines of most target gases and pollutants, which are currently the object of environmental sensing applications. A compact NIR semiconductor laser would be extremely useful for those applications. Here, we have used two InAs layers in the active region, so called W active region of the semiconductor laser.
Keywords :
III-V semiconductors; air pollution measurement; indium compounds; measurement by laser beam; remote sensing by laser beam; semiconductor lasers; 2 to 13 mum; InAs; InAs layer; W active region; absorption lines; compact NIR semiconductor laser; environmental sensing applications; high-performance mid-IR type-II interband cascade lasers; pollutants; target gases; Coordinate measuring machines; Hafnium; Jitter; Laser transitions; Polarization; Quantum cascade lasers; Semiconductor device noise; Semiconductor lasers; Solid lasers; Solitons;
Conference_Titel :
Lasers and Electro-Optics, 2000. (CLEO 2000). Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-634-6
DOI :
10.1109/CLEO.2000.906725
