Title :
Continuous wave operation of mid-infrared type-II interband cascade lasers
Author :
Yang, R.Q. ; Bradshaw, J.L. ; Bruno, J.D. ; Pham, J.T. ; Wortman, D.E.
Author_Institution :
US Army Res. Lab., Adelphi, MD, USA
Abstract :
Summary form only given. We believe we report the first cw operation of type-II interband cascade lasers. The IC laser structure, grown in a Varian Gen-II MBE system on a GaSb substrate, consists of 23 cascaded InAs-GaInSb QW active regions and has a high structural quality as evidenced by many sharp satellite peaks in a double-crystal X-ray diffraction.
Keywords :
III-V semiconductors; X-ray diffraction; indium compounds; infrared sources; molecular beam epitaxial growth; quantum well lasers; GaSb; GaSb substrate; IC laser structure; InAs-GaInSb; Varian Gen-II MBE system; cascaded InAs-GaInSb QW active regions; continuous wave operation; cw operation; double-crystal X-ray diffraction; high structural quality; mid-infrared type-II interband cascade lasers; sharp satellite peaks; type-II interband cascade lasers; Gas lasers; Heating; Laser theory; Laser transitions; Power lasers; Quantum cascade lasers; Quantum well lasers; Testing; Voltage; X-ray diffraction;
Conference_Titel :
Lasers and Electro-Optics, 2000. (CLEO 2000). Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-634-6
DOI :
10.1109/CLEO.2000.906726
