Title :
Room-temperature cw operation of GaInAsSb/AlGaAsSb quantum well diode lasers emitting beyond 2 /spl mu/m
Author :
Mermelstein, C. ; Simanowski, S. ; Mayer, M. ; Kiefer, R. ; Schmitz, J. ; Walther, M. ; Wagner, J.
Author_Institution :
Fraunhofer-Inst. fur Angewandte Festkorperphys., Freiburg, Germany
Abstract :
Summary form only given. We have demonstrated room-temperature CW operation of large optical cavity GaInAsSb-AlGaAsSb type-I QW lasers emitting at 2.25 /spl mu/m, lasing up to at least 320 K. A maximum current efficiency of 0.16 W/A and power efficiency of 17% has been achieved.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; laser transitions; quantum well lasers; 17 percent; 2.25 mum; 320 K; GaInAsSb-AlGaAsSb; GaInAsSb-AlGaAsSb type-I QW lasers; GaInAsSb/AlGaAsSb quantum well diode lasers; large optical cavity; maximum current efficiency; power efficiency; room-temperature cw operation; Biomedical optical imaging; Diode lasers; Gas lasers; Laser modes; Laser surgery; Optical design; Quantum well lasers; Semiconductor diodes; Semiconductor lasers; Spectroscopy;
Conference_Titel :
Lasers and Electro-Optics, 2000. (CLEO 2000). Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-634-6
DOI :
10.1109/CLEO.2000.906730
