DocumentCode
2918702
Title
Large displacement low voltage multistable micro actuator
Author
Gerson, Y. ; Krylov, S. ; Ilic, B. ; Schreiber, D.
Author_Institution
Tel Aviv Univ., Tel Aviv
fYear
2008
fDate
13-17 Jan. 2008
Firstpage
463
Lastpage
466
Abstract
This paper presents the modeling, design, fabrication and characterization of electrostatic large displacement multistable micro actuators. The device incorporates multiple serially connected bistable elements realized as shallow curved beams of slightly varying length. Loaded by an increasing force provided by an electrostatic comb drive transducer, the device undergoes a sequence of snap- through events and exhibits multiple stable equilibrium configurations at the same voltage. A reduced order (RO) model built using the Rayleigh-Ritz procedure as well as a nonlinear finite element (FE) analysis were used in order to predict the actuator behavior and evaluate design parameters. Devices of four different configurations were fabricated by a deep reactive ion etching (DRIE) based process using silicon on insulator (SOI) wafers. Experimental results demonstrate that the multistable devices exhibit stable displacement of 90mum while four snap-through and snap-back events take place during loading and unloading respectively. Experimental results are found to be in good agreement with the theoretical predictions.
Keywords
Rayleigh-Ritz methods; electrostatic actuators; finite element analysis; reduced order systems; silicon-on-insulator; sputter etching; transducers; Rayleigh-Ritz procedure; SOI; Si-SiO2; deep reactive ion etching based process; electrostatic comb drive transducer; electrostatic large displacement; low voltage multistable micro actuator; multiple serially connected bistable elements; multiple stable equilibrium configurations; nonlinear finite element analysis; reduced order model; shallow curved beams; silicon-on-insulator wafers; snap- through events; Actuators; Electrostatics; Fabrication; Finite element methods; Low voltage; Microactuators; Predictive models; Semiconductor device modeling; Silicon on insulator technology; Transducers;
fLanguage
English
Publisher
ieee
Conference_Titel
Micro Electro Mechanical Systems, 2008. MEMS 2008. IEEE 21st International Conference on
Conference_Location
Tucson, AZ
ISSN
1084-6999
Print_ISBN
978-1-4244-1792-6
Electronic_ISBN
1084-6999
Type
conf
DOI
10.1109/MEMSYS.2008.4443693
Filename
4443693
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