DocumentCode :
2918844
Title :
Pull-in behavior and multistability of a curved microbeam actuated by a distributed electrostatic force
Author :
Krylov, S. ; Seretensky, S. ; Schreiber, D.
Author_Institution :
Tel Aviv Univ., Tel Aviv
fYear :
2008
fDate :
13-17 Jan. 2008
Firstpage :
499
Lastpage :
502
Abstract :
In this work we report on theoretical and experimental investigation of a multistability phenomenon in initially curved flexible clamped-clamped microbeams actuated in-plane by a distributed electrostatic force and fabricated from silicon on insulator (SOI) wafer using a deep reactive ion etching (DRIE) process. Theoretical results provided by a reduced order (RO) model of the shallow Euler-Bernoulli arch and backed by experiments indicate that in the device with non-monotonous stiffness-deflection dependence the voltage-deflection characteristic may have two maxima implying the existence of multiple stable configurations at the same voltage while the range of stable deflections is significantly larger and pull-in voltage is lower than in a straight beam.
Keywords :
beams (structures); elasticity; electrostatic actuators; flexible structures; reduced order systems; silicon-on-insulator; sputter etching; stability; Si-JkJk; curved flexible clamped-clamped microbeams; curved microbeam actuator; deep reactive ion etching process; distributed electrostatic force; multiple stable configurations; multistability phenomenon; nonmonotonous stiffness-deflection dependence device; pull-in behavior; reduced order model; shallow Euler-Bernoulli arch; silicon on insulator wafer; voltage-deflection characteristics; Electrodes; Electrostatic actuators; Etching; Mechanical engineering; Microelectromechanical devices; Residual stresses; Semiconductor device modeling; Silicon on insulator technology; Thermal stresses; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro Electro Mechanical Systems, 2008. MEMS 2008. IEEE 21st International Conference on
Conference_Location :
Tucson, AZ
ISSN :
1084-6999
Print_ISBN :
978-1-4244-1792-6
Electronic_ISBN :
1084-6999
Type :
conf
DOI :
10.1109/MEMSYS.2008.4443702
Filename :
4443702
Link To Document :
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