DocumentCode
2918844
Title
Pull-in behavior and multistability of a curved microbeam actuated by a distributed electrostatic force
Author
Krylov, S. ; Seretensky, S. ; Schreiber, D.
Author_Institution
Tel Aviv Univ., Tel Aviv
fYear
2008
fDate
13-17 Jan. 2008
Firstpage
499
Lastpage
502
Abstract
In this work we report on theoretical and experimental investigation of a multistability phenomenon in initially curved flexible clamped-clamped microbeams actuated in-plane by a distributed electrostatic force and fabricated from silicon on insulator (SOI) wafer using a deep reactive ion etching (DRIE) process. Theoretical results provided by a reduced order (RO) model of the shallow Euler-Bernoulli arch and backed by experiments indicate that in the device with non-monotonous stiffness-deflection dependence the voltage-deflection characteristic may have two maxima implying the existence of multiple stable configurations at the same voltage while the range of stable deflections is significantly larger and pull-in voltage is lower than in a straight beam.
Keywords
beams (structures); elasticity; electrostatic actuators; flexible structures; reduced order systems; silicon-on-insulator; sputter etching; stability; Si-JkJk; curved flexible clamped-clamped microbeams; curved microbeam actuator; deep reactive ion etching process; distributed electrostatic force; multiple stable configurations; multistability phenomenon; nonmonotonous stiffness-deflection dependence device; pull-in behavior; reduced order model; shallow Euler-Bernoulli arch; silicon on insulator wafer; voltage-deflection characteristics; Electrodes; Electrostatic actuators; Etching; Mechanical engineering; Microelectromechanical devices; Residual stresses; Semiconductor device modeling; Silicon on insulator technology; Thermal stresses; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Micro Electro Mechanical Systems, 2008. MEMS 2008. IEEE 21st International Conference on
Conference_Location
Tucson, AZ
ISSN
1084-6999
Print_ISBN
978-1-4244-1792-6
Electronic_ISBN
1084-6999
Type
conf
DOI
10.1109/MEMSYS.2008.4443702
Filename
4443702
Link To Document