DocumentCode :
2918927
Title :
CMOS-MEMS probes for reconfigurable IC’s
Author :
Liu, J. ; Noman, M. ; Bain, J.A. ; Schlesinger, T.E. ; Fedder, G.K.
Author_Institution :
Carnegie Mellon Univ., Pittsburgh
fYear :
2008
fDate :
13-17 Jan. 2008
Firstpage :
515
Lastpage :
518
Abstract :
We report on our progress on the development of CMOS-MEMS electrothermal conductive probes for memory-intensive self-configuring integrated circuits (MISCICs). The MISCIC vision is to use MEMS conductive probes to reconfigure circuits by mechanically addressing and passing current through resistance change vias embedded within the chip circuitry. Cantilevered probes are designed with 1, 4, 9, 16 and 25 mum2 areas that are plated with nickel. The vertical range of the electrothermal actuator is 23.9 mum with 3.7 mW heating power, but the range is reduced when in contact with a gold-coated glass slide due to thermal effects. Probe contact to gold varies from 10-50 Omega for multiple make and break cycles with 1 mum2 tips.
Keywords :
CMOS integrated circuits; cantilevers; electrical contacts; gold; micromechanical devices; nickel; probes; CMOS-MEMS probes; cantilevered probes; electrical contact; electrothermal actuator; electrothermal conductive probes; gold-coated glass slide; memory-intensive self-configuring integrated circuits; nickel plating; power 3.7 mW; reconfigurable IC; resistance 10 ohm to 50 ohm; thermal effects; Actuators; CMOS integrated circuits; Contacts; Electrothermal effects; Etching; Gold; Micromechanical devices; Nickel; Probes; Switches;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro Electro Mechanical Systems, 2008. MEMS 2008. IEEE 21st International Conference on
Conference_Location :
Tucson, AZ
ISSN :
1084-6999
Print_ISBN :
978-1-4244-1792-6
Electronic_ISBN :
1084-6999
Type :
conf
DOI :
10.1109/MEMSYS.2008.4443706
Filename :
4443706
Link To Document :
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