DocumentCode
2918929
Title
Silicon carbide radiation detector for harsh environments
Author
Metzger, S. ; Henschel, H. ; Köhn, O. ; Lennartz, W.
Author_Institution
Fraunhofer-INT, Euskirchen, Germany
fYear
2001
fDate
10-14 Sept. 2001
Firstpage
51
Lastpage
56
Abstract
We used commercial off the shelf (COTS) silicon carbide (SiC) ultraviolet photodiodes for measuring gamma dose rates at high temperature. We tested them with Co-60 gamma dose rates between 0.03 mGy(Air)/s and 3 Gy(Air)/s. The diodes show excellent sensitivity, high signal to noise ratio, and good linearity. They had been operated at temperatures up to 200°C with negligible changes of the dark and the radiation induced current. Gamma irradiation up to a total dose of 1080 kGy(Air), 32 MeV proton irradiations up to a fluence of 8.5 × 1012 cm-2, and 14 MeV neutron irradiations up to 4.1 × 1012 cm-2 demonstrate their radiation hardness. These results and the ability to measure the proton as well as the neutron dose rate after a calibration with Co-60 gammas show that COTS SiC diodes can be used as radiation detectors in harsh environments.
Keywords
gamma-ray detection; neutron detection; photodiodes; proton detection; radiation hardening (electronics); semiconductor counters; silicon compounds; ultraviolet detectors; wide band gap semiconductors; 1080 kGy; 14 MeV; 200 degC; 32 MeV; SiC; SiC radiation detector; gamma dose rates measurement; gamma irradiation; harsh environments; high signal to noise ratio; linearity; neutron irradiations; proton irradiations; sensitivity; ultraviolet photodiodes; Diodes; Linearity; Neutrons; Photodiodes; Protons; Radiation detectors; Signal to noise ratio; Silicon carbide; Temperature sensors; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and Its Effects on Components and Systems, 2001. 6th European Conference on
Print_ISBN
0-7803-7313-8
Type
conf
DOI
10.1109/RADECS.2001.1159258
Filename
1159258
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