Gamma-ray irradiation and post-irradiation responses of high dose range RADFETs

Author

Jaksic, A. ; Ristic, G. ; Pejovic, M. ; Mohammadzadeh, A. ; Sudre, C. ; Lane, W.

Author_Institution

Nat. Microelectron. Res. Centre, Cork, Ireland

fYear

2001

fDate

10-14 Sept. 2001

Firstpage

57

Lastpage

65

Abstract

Gamma-ray irradiation and post-irradiation responses have been studied for the two types of radiation sensitive p-channel MOSFETs (RADFETs) from different manufacturers. In addition to, in dosimetric applications standard, threshold voltage measurements at a single specified current, transistor I-V and charge-pumping characteristics have been monitored. This has been shown to be useful in providing a more detailed insight into processes that occur during irradiation and subsequent annealing at elevated temperature. In particular, the role of switching oxide traps (also known as "border" traps) and electron traps in studied devices has been revealed.

Keywords

MOSFET; annealing; dosimeters; electron traps; gamma-ray detection; hole traps; interface states; radiation hardening (electronics); semiconductor counters; annealing; border traps; charge-pumping characteristics; dosimetric applications standard; electron traps; gamma-ray irradiation; high dose range RADFETs; post-irradiation responses; radiation sensitive p-channel MOSFETs; switching oxide traps; threshold voltage measurements; transistor I-V; Annealing; Charge pumps; Current measurement; Electron traps; MOSFETs; Manufacturing; Measurement standards; Monitoring; Threshold voltage; Voltage measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and Its Effects on Components and Systems, 2001. 6th European Conference on

Print_ISBN

0-7803-7313-8

Type

conf

DOI

10.1109/RADECS.2001.1159259

Filename

1159259