Novel results on fluence dependence and annealing behaviour of oxygenated and non-oxygenated silicon detectors

Author

Martinez, C. ; Rafi, J.M. ; Lozano, M. ; Campabadal, F. ; Santander, J. ; Fonseca, L. ; Ullán, M. ; Moreno, A.

Author_Institution

Inst. de Microelectron. de Barcelona, Spain

fYear

2001

fDate

10-14 Sept. 2001

Firstpage

91

Lastpage

97

Abstract

This work presents the latest results on electrical properties degradation of silicon radiation detectors manufactured at IMB-CNM (Institut de Microelectronica de Barcelona) subjected to proton irradiation at CERN for high energy physics applications. The evolution of full depletion voltage and leakage current with fluence, as well as their annealing behaviour with time, were studied. The results obtained extend the previous understanding of the role played by technology and oxygenated material in hardening silicon radiation detectors.

Keywords

annealing; elemental semiconductors; leakage currents; proton effects; radiation hardening (electronics); semiconductor device measurement; silicon; silicon radiation detectors; Si; annealing; depletion voltage; electrical properties degradation; fluence dependence; leakage current; nonoxygenated silicon detectors; oxygenated silicon detectors; proton irradiation; silicon radiation detector hardening; silicon radiation detectors; Annealing; Collaborative work; Degradation; Large Hadron Collider; Manufacturing; Protons; Radiation detectors; Radiation hardening; Silicon radiation detectors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and Its Effects on Components and Systems, 2001. 6th European Conference on

Print_ISBN

0-7803-7313-8

Type

conf

DOI

10.1109/RADECS.2001.1159263

Filename

1159263