• DocumentCode
    2919090
  • Title

    Layer thickness analysis of silicon solar cells

  • Author

    Abdullah, M.H. ; Rashied, N.A. ; Rusop, M.

  • Author_Institution
    Fac. of Electr. Eng., Solar Cell Lab., Univ. Teknol. MARA (UiTM), Shah Alam, Malaysia
  • fYear
    2010
  • fDate
    11-14 April 2010
  • Firstpage
    149
  • Lastpage
    153
  • Abstract
    In this study, the effect of varying the corresponding thicknesses of p-type and n-type contact area of single junction silicon solar cells has been investigated. The simulation has been carried out using Silvaco TCAD. Several samples were created and the effects of each solar cell were analyzed. The result shows that thinner solar cell gives higher photogeneration efficiency (64%) due to higher carrier generation near the incident surface while thicker combination of p-type and n-type thickness produce lower photogeneration efficiency (59%) due to the reduction of photogeneration rate in deeper area. The photogeneration rate is decresing in exponential term when distance or thickness increase.
  • Keywords
    power engineering computing; silicon; solar cells; Silvaco TCAD; efficiency 59 percent; efficiency 64 percent; layer thickness analysis; n-type contact area; p-type contact area; photogeneration efficiency; single junction silicon solar cells; Boron; Coatings; Electrons; Impurities; Laboratories; Photovoltaic cells; Photovoltaic effects; Semiconductor materials; Silicon compounds; Solar power generation; Efficiency; Solar cell; Structure Effect; Thickness Effect;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Devices, Systems and Applications (ICEDSA), 2010 Intl Conf on
  • Conference_Location
    Kuala Lumpur
  • Print_ISBN
    978-1-4244-6629-0
  • Type

    conf

  • DOI
    10.1109/ICEDSA.2010.5503085
  • Filename
    5503085