Temperature dependence of heavy ion induced current transients in Si epilayer devices

Author

Laird, J.S. ; Hirao, T. ; Onoda, S. ; Mori, H. ; Itoh, H.

Author_Institution

Japan Atomic Energy Res. Inst., Gunmaken, Japan

fYear

2001

fDate

10-14 Sept. 2001

Firstpage

125

Lastpage

131

Abstract

We report on the temperature dependence of the heavy ion Transient-Ion Beam Induced Current response of Si epilayer devices from 80K to 300K. The measurements were performed on a heavy ion micro-beam in conjunction with the new Transient-Ion Beam Induced Current system developed at JAERI. Furthermore, we perform a detailed comparison with TCAD simulations and discuss the results in terms of TCAD modeling, experimental procedure and the implications for temperature related SEU modeling.

Keywords

elemental semiconductors; ion beam effects; radiation hardening (electronics); semiconductor device models; semiconductor epitaxial layers; silicon; technology CAD (electronics); 80 to 300 K; Si; Si epilayer devices; TCAD modeling; TCAD simulations; heavy ion induced current transients; temperature dependence; temperature related SEU modeling; Computational modeling; Conductivity; Current measurement; MOS devices; Performance evaluation; Single event upset; Temperature dependence; Temperature distribution; Temperature sensors; Transient response;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and Its Effects on Components and Systems, 2001. 6th European Conference on

Print_ISBN

0-7803-7313-8

Type

conf

DOI

10.1109/RADECS.2001.1159269

Filename

1159269