Title :
Analysis of total dose tolerance of LOCOS isolated MOSFET by 2D self consistent simulations
Author :
Torres, A. ; Flament, O.
Author_Institution :
DAM Ile-de-France, CEA, Bruyeres-le-Chatel, France
Abstract :
The total dose tolerance of parasitic LOCOS field transistors is analyzed using 2D self consistent simulations. The influence of process parameters such as the substrate doping level is examined through both experimental and simulation results to improve the understanding of ionizing effects on isolation.
Keywords :
MOSFET; SCF calculations; oxidation; radiation hardening (electronics); semiconductor device models; 2D self consistent simulations; LOCOS isolated MOSFET; ionizing effects; isolation; process parameters; substrate doping level; total dose tolerance; Analytical models; CMOS technology; Doping; Electron traps; Implants; Ionizing radiation; Leakage current; MOSFET circuits; Threshold voltage; Very large scale integration;
Conference_Titel :
Radiation and Its Effects on Components and Systems, 2001. 6th European Conference on
Print_ISBN :
0-7803-7313-8
DOI :
10.1109/RADECS.2001.1159284
