Title :
Periodically excited photo-EMF signals in GaAs multiple quantum wells
Author :
Seres-Rodriguez, I. ; Dominguez-Cruz, R. ; Ramos-Garcia, Raul ; Stepanov, S.I. ; Nolte, David D. ; Melloch, M.R.
Author_Institution :
INAOE, Puebla, Mexico
Abstract :
Summary form only given.Summary from only given. Recently the GaAs multiple quantum well (MQW) transverse-field structures were investigated by means of DC photo-EMF effect, which is excited by moving interference pattern at /spl lambda/=1064 nm. Below we present the first results on investigation of similar and longitudinal-filed structures by means of alternating photo-EMF currents (excited by vibrating interference pattern) at shorter wavelengths, which ensure efficient generation of photocarriers of both types.
Keywords :
gallium arsenide; photoconductivity; photoelectricity; semiconductor quantum wells; 1064 nm; DC photo-EMF effect; GaAs; GaAs MQW transverse-field structures; GaAs multiple quantum wells; alternating photo-EMF currents; longitudinal-filed structures; moving interference pattern; periodically excited photo-EMF signals; photocarriers; vibrating interference pattern; AC generators; Gallium arsenide; Interference; Quantum well devices;
Conference_Titel :
Lasers and Electro-Optics, 2000. (CLEO 2000). Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-634-6
DOI :
10.1109/CLEO.2000.906782
