DocumentCode :
2919546
Title :
Photorefractive multiple quantum well devices at 1064 nm
Author :
Iwamoto, S. ; Kageshima, H. ; Taketomi, S. ; Nishioka, M. ; Someya, T. ; Arakawa, Y. ; Fukutani, K. ; Shimura, T. ; Kuroda, K.
Author_Institution :
Inst. of Ind. Sci., Tokyo Univ., Japan
fYear :
2000
fDate :
7-12 May 2000
Firstpage :
106
Lastpage :
107
Abstract :
Summary form only given.Summary from only given. Photorefractive multiple quantum wells (MQWs) have been applied to the ultrasound detection, the depth-resolved image recognition through turbid media, and so on. The fabrication of photorefractive MQW devices at 1064 nm and its applications to proposed measurement systems are very attractive and interesting. Furthermore, the realization of these devices may create the new area of applications of photorefractive MQWs. Here, we report on the fabrication of photorefractive InGaAs-GaAs MQWs and its performance at the wavelength of 1064 nm.
Keywords :
III-V semiconductors; gallium arsenide; image recognition; indium compounds; optical fabrication; photorefractive materials; quantum well devices; ultrasonic measurement; 1064 nm; InGaAs-GaAs; depth-resolved image recognition; measurement systems; photorefractive InGaAs-GaAs MQWs; photorefractive MQW devices; photorefractive multiple quantum well devices; turbid media; ultrasound detection; Frequency conversion; Gallium arsenide; Image storage; Nonlinear optics; Optical buffering; Optical mixing; Optical saturation; Photorefractive effect; Quantum well devices; Ultrasonic imaging;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2000. (CLEO 2000). Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-634-6
Type :
conf
DOI :
10.1109/CLEO.2000.906784
Filename :
906784
Link To Document :
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