Title :
Temperature-Insensitive 10 Gb/s Direct Modulation Lasers with InAs Self-Assembled Quantum Dots at 1.3 μm
Author :
Sugawara, M. ; Otsubo, K. ; Yamamoto, T. ; Hatori, N. ; Ishida, M. ; Ebe, H. ; Nakata, Y. ; Arakawa, Y.
Author_Institution :
Fujitsu Laboratories Ltd., Fujitsu Ltd., OITDA, 10-1 Morinosato-Wakamiya, Atsugi 243-0197, JAPAN e-mail: msuga@iis.u-tokyo.ac.jp
Abstract :
Based on our design on the maximum bandwidth for high-speed modulation and p-type doping into quantum dots for high temperature stability, we realized temperature-insensitive 10 Gb/s laser diodes at 1.3 μm.
Keywords :
Bandwidth; Diode lasers; Gallium arsenide; Laser stability; Optical design; Quantum dot lasers; Quantum dots; Quantum well lasers; Temperature sensors; US Department of Transportation;
Conference_Titel :
Lasers and Electro-Optics, 2005. CLEO/Pacific Rim 2005. Pacific Rim Conference on
Conference_Location :
Tokyo, Japan
Print_ISBN :
0-7803-9242-6
DOI :
10.1109/CLEOPR.2005.1569347
