Total dose effects on ATLAS-SCT front-end electronics

Author

Ullán, Miguel ; Dorfan, David ; Dubbs, Tim ; Grillo, Alexander A. ; Spencer, Edwin ; Seiden, Abraham ; Spieler, Helmuth ; Gilchriese, Murdock ; Lozano, Manuel

Author_Institution

Santa Cruz Inst. for Particle Phys., Univ. of California, Santa Cruz, CA, USA

fYear

2001

fDate

10-14 Sept. 2001

Firstpage

351

Lastpage

356

Abstract

Low dose rate effects (LDRE) in bipolar technologies complicate the hardness assurance testing for high energy physics applications. The damage produced in the ICs in the real experiment can be underestimated if fast irradiations are carried out, while experiments done at the real dose rate are usually unpractical due to the still high total doses involved. In this work the sensitivity to LDRE of two bipolar technologies proposed for the ATLAS-SCT experiment at CERN is evaluated, finding one of them free of those effects.

Keywords

bipolar integrated circuits; gamma-ray effects; readout electronics; ATLAS-SCT front-end electronics; LDRE; bipolar technologies; gamma radiation effects; hardness assurance testing; low dose rate effects; total dose effects; Bipolar integrated circuits; Bipolar transistors; Electronic equipment testing; Helium; Integrated circuit technology; Large Hadron Collider; Microelectronics; Physics; Radiation detector circuits; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and Its Effects on Components and Systems, 2001. 6th European Conference on

Print_ISBN

0-7803-7313-8

Type

conf

DOI

10.1109/RADECS.2001.1159306

Filename

1159306