Title :
Performance enhancement of single electron junction 1-bit full adder
Author :
Basith, Iftekhar Ibne ; Supon, Tareq Muhammad ; Muhury, Ajit ; Rashidzadeh, Rashid ; Ahmadi, Majid
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Windsor, Windsor, ON, Canada
Abstract :
The focus of this paper is to study the reliability issue of single-electron tunneling (SET) technology using multi-island structure for 1-bit full adder circuit. A new set of parameters are proposed in this paper showing better sensitivity towards the random background charge (RBC). Impact of temperature and background charge on the performance parameters and voltage swing are also analyzed. Multi-island clique (K-3) structure is implemented and compared with the designs reported in the literature.
Keywords :
adders; circuit reliability; single electron devices; K-3 structure; RBC; SET technology; multiisland clique structure; random background charge; single electron junction full adder circuit; single-electron tunneling technology; voltage swing; word length 1 bit; Adders; Integrated circuit reliability; Junctions; Logic gates; Periodic structures; Simulation;
Conference_Titel :
Electronics, Circuits and Systems (ICECS), 2011 18th IEEE International Conference on
Conference_Location :
Beirut
Print_ISBN :
978-1-4577-1845-8
Electronic_ISBN :
978-1-4577-1844-1
DOI :
10.1109/ICECS.2011.6122238
