Title :
Single-event sensitivity of a single SRAM cell
Author :
Darracq, F. ; Beauchêne, T. ; Pouget, V. ; Lapuyade, H. ; Lewis, D. ; Fouillat, P. ; Touboul, A.
Author_Institution :
IXL, Bordeaux I Univ., Talence, France
Abstract :
A test vehicle has been specially realized to demonstrate that different physical mechanisms are responsible for SEU phenomena within an elementary memory cell, depending on the impact location. Validation is performed by means of pulsed laser equipment.
Keywords :
SRAM chips; integrated circuit testing; radiation hardening (electronics); impact location; pulsed laser equipment; single SRAM cell; single-event sensitivity; Deconvolution; Laser beams; Laser theory; Optical pulses; Random access memory; Single event upset; Space technology; Spatial resolution; Testing; Vehicles;
Conference_Titel :
Radiation and Its Effects on Components and Systems, 2001. 6th European Conference on
Print_ISBN :
0-7803-7313-8
DOI :
10.1109/RADECS.2001.1159311
