DocumentCode :
2919979
Title :
Assessing testing techniques for resistive-open defects in nanometer CMOS adders
Author :
Fawaz, Ahmed ; Jabe, Ameen ; Kassem, Ali ; Chehab, Ali ; Kayssi, Ayman
Author_Institution :
Dept. of Electr. & Comput. Eng., American Univ. of Beirut, Beirut, Lebanon
fYear :
2011
fDate :
11-14 Dec. 2011
Firstpage :
165
Lastpage :
168
Abstract :
As we move to smaller CMOS technologies, the need for better testing techniques arises. We investigate the effectiveness of four testing techniques against resistive-open defects. The tests are applied to two adder topologies, namely the quasi-clocked adder and the bridge-style adder. The tests are done under full process variations for technologies down to 16nm. The test techniques based on dynamic power supply current (iDDT) show superiority for large-feature technologies, but as the technology decreases delay tests appear to be the most effective.
Keywords :
CMOS integrated circuits; adders; integrated circuit testing; nanotechnology; adder topologies; bridge-style adder; dynamic power supply current; nanometer CMOS adders; quasiclocked adder; resistive-open defects; testing techniques; Adders; Circuit faults; Delay; Integrated circuit modeling; Testing; Transient analysis; Wavelet transforms; IDDT; Wavelet; adders; delay test; nanometer technologies; process variations;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics, Circuits and Systems (ICECS), 2011 18th IEEE International Conference on
Conference_Location :
Beirut
Print_ISBN :
978-1-4577-1845-8
Electronic_ISBN :
978-1-4577-1844-1
Type :
conf
DOI :
10.1109/ICECS.2011.6122240
Filename :
6122240
Link To Document :
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