Title :
Increased light extraction from a light-emitting diode using a two-dimensional photonic crystal
Author :
Erchak, A.A. ; Ripin, D.J. ; Fan, S. ; Petrich, G.S. ; Joannopoulos, J.D. ; Kolodziejski, Leslie A. ; Ippen, E.P.
Author_Institution :
Res. Lab. of Electron., MIT, Cambridge, MA, USA
Abstract :
Summary form only given.Enhanced light extraction is obtained from a light-emitting diode (LED) containing a two-dimensional (2D) photonic band gap (PBG) crystal. The 2D photonic crystal prohibits the propagation of light within a certain range of frequencies in the plane of the PBG. Several methods to modify light emission using a 2D photonic crystal have been studied. A 2D PBG is fabricated in the top cladding layer of an InGaP/InGaAs quantum well structure that emits at /spl lambda/=980 nm. The photonic crystal is designed such that the emission wavelength lies inside the photonic band gap eliminating the coupling to lateral guided modes within the semiconductor, that is a major source of loss in conventional LEDs. In our experiments, the surface normal photoluminescence at 980 nm is enhanced by a factor of 6 in the presence of a photonic crystal.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; light emitting diodes; photoluminescence; photonic band gap; quantum well devices; semiconductor quantum wells; spontaneous emission; 2D photonic band gap crystal; 980 nm; InGaP-InGaAs; InGaP/InGaAs quantum well; enhanced light extraction; intensity enhancement; light-emitting diode; surface normal photoluminescence; top cladding layer; triangular lattice of holes; Electron beams; Etching; Gallium arsenide; Indium gallium arsenide; Lattices; Light emitting diodes; Optical arrays; Optical coupling; Photonic crystals; Substrates;
Conference_Titel :
Lasers and Electro-Optics, 2000. (CLEO 2000). Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-634-6
DOI :
10.1109/CLEO.2000.906812
