Title :
Laser-MBE deposition of epitaxial oxides and nitrides using ultrafast laser pulses
Author :
Zhang, Zhenhao ; VanRompay, P.A. ; Nees, J.A. ; Mourou, Gerard ; Pronko, P.P. ; Pan, X.Q. ; Fu, L.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Abstract :
Summary form only given.A laser-MBE system, operating at a base pressure of 5/spl times/10/sup -9/ Torr, is used in conjunction with a 10-Hz ultrafast laser facility for monolayer deposition of various oxide (SnO/sub 2/) and nitride (TiN and BN) thin films under laser-induced gas discharge conditions. The laser delivers pulses in the range of 80 to 150 fs, which are capable of depositing approximately 0.01 monolayer per pulse. Details of the growth mechanisms are followed using a RHEED in-situ monitor where single atomic layer growth processes may be observed. In this way, we have grown extremely high-quality epitaxial films of SnO/sub 2/ on sapphire.
Keywords :
atomic layer epitaxial growth; boron compounds; molecular beam epitaxial growth; pulsed laser deposition; reflection high energy electron diffraction; semiconductor epitaxial layers; semiconductor growth; tin compounds; titanium compounds; 5E-9 torr; BN; RHEED in-situ monitor; SnO/sub 2/; TiN; epitaxial nitrides; epitaxial oxides; growth mechanisms; high-quality films; laser-MBE deposition; laser-induced gas discharge conditions; monolayer deposition; nitride thin films; oxide thin films; sapphire substrate; single atomic layer growth processes; ultrafast laser pulses; Lamps; Optical films; Optical pulses; Optical refraction; Optical sensors; Optical waveguides; Pulsed laser deposition; Semiconductor films; Silicon compounds; Ultrafast optics;
Conference_Titel :
Lasers and Electro-Optics, 2000. (CLEO 2000). Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-634-6
DOI :
10.1109/CLEO.2000.906815
