Title :
Single-event testing using heavy ion irradiation through thick layers of material
Author :
Swift, Gary M. ; Millward, Douglas G. ; Clark, Henry L.
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Abstract :
Upset results for backside irradiated PowerPC750s (thin epi) and SDRAMs (deep charge collection from diffusion) illustrate the validity of single event test data when irradiating through a layer of silicon substrate. However, heavy-ion LET assignments require accurate material and thickness determination. Taking irradiating through materials further, the Texas A&M cyclotron uses adjustable degraders to offer a continuous range of heavy ion LETs as well as an optional in-air test fixture.
Keywords :
DRAM chips; flip-chip devices; integrated circuit testing; ion beam effects; silicon; SDRAMs; Si; backside irradiated PowerPC750s; deep charge collection; diffusion; heavy ion irradiation; heavy-ion LET; silicon substrate; single-event testing; Bonding; Conducting materials; Cyclotrons; Electronics packaging; Joining processes; Laboratories; Materials testing; Semiconductor materials; Silicon; Space technology;
Conference_Titel :
Radiation and Its Effects on Components and Systems, 2001. 6th European Conference on
Print_ISBN :
0-7803-7313-8
DOI :
10.1109/RADECS.2001.1159319
