DocumentCode
2920108
Title
Single-event testing using heavy ion irradiation through thick layers of material
Author
Swift, Gary M. ; Millward, Douglas G. ; Clark, Henry L.
Author_Institution
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
fYear
2001
fDate
10-14 Sept. 2001
Firstpage
438
Lastpage
442
Abstract
Upset results for backside irradiated PowerPC750s (thin epi) and SDRAMs (deep charge collection from diffusion) illustrate the validity of single event test data when irradiating through a layer of silicon substrate. However, heavy-ion LET assignments require accurate material and thickness determination. Taking irradiating through materials further, the Texas A&M cyclotron uses adjustable degraders to offer a continuous range of heavy ion LETs as well as an optional in-air test fixture.
Keywords
DRAM chips; flip-chip devices; integrated circuit testing; ion beam effects; silicon; SDRAMs; Si; backside irradiated PowerPC750s; deep charge collection; diffusion; heavy ion irradiation; heavy-ion LET; silicon substrate; single-event testing; Bonding; Conducting materials; Cyclotrons; Electronics packaging; Joining processes; Laboratories; Materials testing; Semiconductor materials; Silicon; Space technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and Its Effects on Components and Systems, 2001. 6th European Conference on
Print_ISBN
0-7803-7313-8
Type
conf
DOI
10.1109/RADECS.2001.1159319
Filename
1159319
Link To Document