• DocumentCode
    2920166
  • Title

    On the design of balanced carbon nanotube field-effect transistor gates

  • Author

    Dev, Kapil ; Massoud, Yehia

  • Author_Institution
    ECE Dept., Rice Univ., Houston, TX, USA
  • fYear
    2011
  • fDate
    11-14 Dec. 2011
  • Firstpage
    204
  • Lastpage
    207
  • Abstract
    In this paper, we analyze the compact models for carbon nanotube field-effect transistors (CNTFET) and observe that the logic-gates implemented using CNTFET with unoptimized device parameter have asymmetric voltage transfer characteristic. We propose the design of a balanced inverter circuit implemented using CNTFET devices. The proposed inverter circuit is functional over a wide range of supply voltage, from sub-threshold voltage to nominal supply voltage.
  • Keywords
    carbon nanotube field effect transistors; invertors; logic gates; C; CNTFET devices; asymmetric voltage transfer characteristic; balanced carbon nanotube; balanced inverter circuit; carbon nanotube field-effect transistors; field effect transistor gates; logic gates; unoptimized device parameter; CNTFETs; Carbon nanotubes; Inductance; Integrated circuit modeling; Inverters; Logic gates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronics, Circuits and Systems (ICECS), 2011 18th IEEE International Conference on
  • Conference_Location
    Beirut
  • Print_ISBN
    978-1-4577-1845-8
  • Electronic_ISBN
    978-1-4577-1844-1
  • Type

    conf

  • DOI
    10.1109/ICECS.2011.6122249
  • Filename
    6122249