Spectral response of gamma and electron irradiated pin photodiode

Author

Onoda, S. ; Hirao, T. ; Laird, J.S. ; Mori, H. ; Okamoto, T. ; Koizumi, Y. ; Itoh, H.

Author_Institution

Tokai Univ., Kanagawa, Japan

fYear

2001

fDate

10-14 Sept. 2001

Firstpage

450

Lastpage

454

Abstract

The optical spectral response of Si pin photodiodes was examined after gamma and electron irradiation. We observed both a significant decrease in the peak optical response and peak position with increasing total dose. This effect was successfully explained by modeling the degradation of the minority carrier diffusion length in the base region. The diffusion length damage factor was estimated in the context of the non-ionization energy loss (NIEL). A close agreement was found between the observed degradation behavior and that predicted by NIEL.

Keywords

carrier lifetime; electron beam effects; gamma-ray effects; minority carriers; p-i-n photodiodes; semiconductor device measurement; NIEL; Si; Si pin photodiodes; diffusion length damage factor; electron irradiation; gamma irradiation; minority carrier diffusion length; nonionization energy loss; optical spectral response; peak optical response; Cloning; Degradation; Electron optics; Energy loss; Gamma rays; Lamps; Optical losses; Optical sensors; PIN photodiodes; Telephony;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and Its Effects on Components and Systems, 2001. 6th European Conference on

Print_ISBN

0-7803-7313-8

Type

conf

DOI

10.1109/RADECS.2001.1159321

Filename

1159321