Title :
Observation of changes in the single event upset rate in 4MB SRAM due to intervening materials in a neutron environment
Author :
Wilkins, R. ; Huff, H. ; Badhwar, GAUTAM D. ; Moore, J. ; Zhou, J. ; Singleterry, R.C. ; Wender, S.A. ; Fogarty, T.N.
Author_Institution :
NASA Center for Appl. Radiat. Res., Prairie View A&M Univ., TX, USA
Abstract :
We observe a significant increase (by a factor of approximately three) in the single event upset (SEU) rate in 4MB SRAM by modifying the incident high-energy neutron field with polyethylene of thickness between 20.5g/cm2-25.5g/cm2. In comparison, these thicknesses of the same intervening materials greatly reduce the tissue equivalent dose as measured with a tissue equivalent proportional counter (TEPC). These results indicate intervening materials that may provide a measure of radiation shielding for humans may be detrimental to electronic systems.
Keywords :
SRAM chips; neutron effects; polymers; radiation hardening (electronics); 4 MB; 4MB SRAM; electronic systems; intervening materials; neutron environment; polyethylene; radiation shielding; single event upset rate; tissue equivalent dose; tissue equivalent proportional counter; Aerospace electronics; Aerospace materials; Aircraft manufacture; Biological materials; Humans; NASA; Neutrons; Polyethylene; Random access memory; Single event upset;
Conference_Titel :
Radiation and Its Effects on Components and Systems, 2001. 6th European Conference on
Print_ISBN :
0-7803-7313-8
DOI :
10.1109/RADECS.2001.1159325
