DocumentCode
2920317
Title
The influence of dose rate on total dose radiation effects on MOSFETs
Author
Sharp, R.E. ; Pater, S.L.
Author_Institution
AEA Technol., Didcot, UK
fYear
2001
fDate
10-14 Sept. 2001
Firstpage
488
Lastpage
493
Abstract
P- and n-channel, medium power MOSFETs have been radiation tested at three widely differing dose rates in order to improve our understanding of the reliability of accelerated testing for these devices. Recent data have indicated that the very low dose rates found in space can lead to more damage than is observed at higher dose rates. The results of the current work show that no difference is observed between the effects caused by the dose rates used here for these devices.
Keywords
MOSFET; radiation effects; space vehicle electronics; MOSFETs; accelerated testing reliability; dose rate influence; space radiation environment; total dose radiation effects; Aerospace testing; Circuit testing; Life estimation; MOSFETs; Manufacturing; Plastic packaging; Radiation effects; Rectifiers; Semiconductor device packaging; System testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and Its Effects on Components and Systems, 2001. 6th European Conference on
Print_ISBN
0-7803-7313-8
Type
conf
DOI
10.1109/RADECS.2001.1159328
Filename
1159328
Link To Document