• DocumentCode
    2920410
  • Title

    GaAs-Based InAs/InGaAs Quantum Dot Vertical Cavity and Vertical External Cavity Surface Emitting Lasers Emitting Near 1300 nm

  • Author

    Lott, J.A. ; Kovsh, A.R. ; Ledentsov, N.N. ; Bimberg, D.

  • Author_Institution
    Air Force Institute of Technology, Ohio, USA
  • fYear
    2005
  • fDate
    30-02 Aug. 2005
  • Firstpage
    160
  • Lastpage
    161
  • Abstract
    The first near 1300 nm electrically-injected vertical cavity surface emitting lasers containing sheets of self-assembled InAs/InGaAs quantum dot active regions grown on GaAs substrates that emit over 1 mW continuous wave peak power at room temperature are demonstrated.
  • Keywords
    Gallium arsenide; Indium gallium arsenide; Microcavities; Power generation; Power lasers; Quantum dot lasers; Surface emitting lasers; Surface waves; US Department of Transportation; Vertical cavity surface emitting lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2005. CLEO/Pacific Rim 2005. Pacific Rim Conference on
  • Print_ISBN
    0-7803-9242-6
  • Type

    conf

  • DOI
    10.1109/CLEOPR.2005.1569382
  • Filename
    1569382
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2920410