Title :
Metamorphic optical receiver components
Author :
Whelan, C.S. ; Marsh, P.F. ; Zhang, Ye ; Hoke, W.E. ; Lardizabal, S. ; Hunt, John ; Grigas, M. ; Kazior, Thomas E.
Author_Institution :
Raytheon RF Components, Andover, MA, USA
Abstract :
GaAs based metamorphic HEMT (MHEMT) technology has emerged as an attractive, low cost alternative to InP HEMTs. The strain-induced imperfections caused by high indium content layers on GaAs are eliminated in metamorphic devices by providing a properly grown lattice-matching buffer between the substrate and active device layers. Metamorphic device technology has now expanded to optical receiver components and shows performance suitable for 40 Gb/s digital and analog optical links.
Keywords :
III-V semiconductors; S-parameters; frequency response; gallium arsenide; high electron mobility transistors; integrated optoelectronics; microwave field effect transistors; optical receivers; photodiodes; 40 Gbit/s; GaAs; GaAs based metamorphic HEMT technology; S-parameters; analog optical links; digital optical links; frequency response; lattice-matching buffer; metamorphic optical receiver components; photodiode; strain-induced imperfections; wide bandwidth amplifier; Bandwidth; Diodes; Frequency; Gallium arsenide; Noise figure; Optical amplifiers; Optical receivers; Performance gain; Photodiodes; mHEMTs;
Conference_Titel :
Lasers and Electro-Optics Society, 2002. LEOS 2002. The 15th Annual Meeting of the IEEE
Print_ISBN :
0-7803-7500-9
DOI :
10.1109/LEOS.2002.1159358
