DocumentCode :
2920923
Title :
High-power multi-pass pumped microchip Nd: GdVO4laser
Author :
Pavel, N. ; Taira, T.
Author_Institution :
Laser Research Center, Institute for Molecular Science, Okazaki 444-8585, Japan; Institute for Atomic Physics, Solid-State Quantum Electronics Laboratory, 76900 Bucharest, Romania Phone: 81 0564 55-7346, Fax: 81 0564 53-5727 e-mail: npavel@ims.ac.jp; npav
fYear :
2005
fDate :
30-02 Aug. 2005
Firstpage :
275
Lastpage :
276
Abstract :
A microchip Nd: GdVO4laser with 13.9 W output power at 1.06 mm for an absorbed power of 22 W and 0.65 slope efficiency is reported employing a multi-pass pumping scheme.
Keywords :
Absorption; Geometrical optics; Laser excitation; Microchip lasers; Neodymium; Power generation; Power lasers; Pump lasers; Surface emitting lasers; Thermal conductivity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2005. CLEO/Pacific Rim 2005. Pacific Rim Conference on
Print_ISBN :
0-7803-9242-6
Type :
conf
DOI :
10.1109/CLEOPR.2005.1569415
Filename :
1569415
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2920923
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