Title :
GHz and THz InGaAsP traveling wave photodetector
Author :
Stöhr, A. ; Malcoci, A. ; Jäger, D.
Author_Institution :
Zentrum fur Halbleitertechnik und Optoelektronik, Gerhard Mercator Univ., Duisburg, Germany
Abstract :
Traveling wave photodetectors have been shown to be promising candidates for high efficiency photonic millimeter-wave signal generation. Using InGaAs/InGaAsP/InP material and 1.55 μm laser diodes the output power at 110 GHz is estimated to be about 0 dBm.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optics; integrated optoelectronics; microwave photonics; millimetre wave generation; photodetectors; photodiodes; submillimetre wave generation; 1.55 μm laser diodes; 1.55 micron; 110 GHz; InGaAs-InGaAsP; InGaAs/InGaAsP/InP material; InGaAsP traveling wave photodetector; InP; leaky InGaAs/InGaAsP optical waveguide; optical heterodyne generation; output power; photonic LO integrated circuit; photonic millimeter-wave signal generation; submillimeter wave frequencies; Frequency; High speed optical techniques; Millimeter wave technology; Optical devices; Optical mixing; Optical transmitters; Optical waveguides; Photodetectors; Power generation; Signal generators;
Conference_Titel :
Lasers and Electro-Optics Society, 2002. LEOS 2002. The 15th Annual Meeting of the IEEE
Print_ISBN :
0-7803-7500-9
DOI :
10.1109/LEOS.2002.1159359
