DocumentCode
2920954
Title
The effect of redundancy on mismatch-induced offset and random noise in a dynamic comparator
Author
Bichan, Mike ; Carusone, Anthony Chan
Author_Institution
Univ. of Toronto, Toronto, ON, Canada
fYear
2009
fDate
12-17 July 2009
Firstpage
180
Lastpage
183
Abstract
We present an analysis of offset voltage and noise in a dynamic comparator. To limit the offset and noise to acceptable levels, a single comparator must be sized quite large. We show that better use can be made of this die area by dividing it into an array of redundant comparators from which the lowest-offset device is chosen. Monte Carlo simulations with a 45 nm CMOS process confirm that the input-offset standard deviation can be reduced arbitrarily in the absence of noise. As the area is divided into a greater number of smaller comparators, random noise overtakes offset as the factor limiting the sensitivity. The competing effects of offset and noise combine to give an optimum number of comparators that maximizes sensitivity for a given total area.
Keywords
CMOS integrated circuits; Monte Carlo methods; comparators (circuits); random noise; CMOS process; Monte Carlo simulations; dynamic comparator; input-offset standard deviation; mismatch-induced offset; offset voltage; random noise; size 45 nm; Analog-digital conversion; CMOS process; Circuits; Communication channels; Digital communication; Educational institutions; Noise level; Noise reduction; Signal analysis; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Research in Microelectronics and Electronics, 2009. PRIME 2009. Ph.D.
Conference_Location
Cork
Print_ISBN
978-1-4244-3733-7
Electronic_ISBN
978-1-4244-3734-4
Type
conf
DOI
10.1109/RME.2009.5201314
Filename
5201314
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