• DocumentCode
    2920954
  • Title

    The effect of redundancy on mismatch-induced offset and random noise in a dynamic comparator

  • Author

    Bichan, Mike ; Carusone, Anthony Chan

  • Author_Institution
    Univ. of Toronto, Toronto, ON, Canada
  • fYear
    2009
  • fDate
    12-17 July 2009
  • Firstpage
    180
  • Lastpage
    183
  • Abstract
    We present an analysis of offset voltage and noise in a dynamic comparator. To limit the offset and noise to acceptable levels, a single comparator must be sized quite large. We show that better use can be made of this die area by dividing it into an array of redundant comparators from which the lowest-offset device is chosen. Monte Carlo simulations with a 45 nm CMOS process confirm that the input-offset standard deviation can be reduced arbitrarily in the absence of noise. As the area is divided into a greater number of smaller comparators, random noise overtakes offset as the factor limiting the sensitivity. The competing effects of offset and noise combine to give an optimum number of comparators that maximizes sensitivity for a given total area.
  • Keywords
    CMOS integrated circuits; Monte Carlo methods; comparators (circuits); random noise; CMOS process; Monte Carlo simulations; dynamic comparator; input-offset standard deviation; mismatch-induced offset; offset voltage; random noise; size 45 nm; Analog-digital conversion; CMOS process; Circuits; Communication channels; Digital communication; Educational institutions; Noise level; Noise reduction; Signal analysis; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Research in Microelectronics and Electronics, 2009. PRIME 2009. Ph.D.
  • Conference_Location
    Cork
  • Print_ISBN
    978-1-4244-3733-7
  • Electronic_ISBN
    978-1-4244-3734-4
  • Type

    conf

  • DOI
    10.1109/RME.2009.5201314
  • Filename
    5201314