Title :
Millimeter-wave high-Q CMOS active inductor
Author :
Fonte, A. ; Zito, D.
Author_Institution :
Dept. of Inf. Eng., Univ. of Pisa, Pisa, Italy
Abstract :
This paper presents a novel low-power high-Q active inductor, which exploits only an integrated transformer and a MOSFET in common drain configuration. The operating principle is explained and the equivalent input impedance is derived. The case study for millimeter-waves low-power applications has been implemented by using a standard 90-nm CMOS process. The active inductor provides an equivalent inductance close to 1.3 nH with an associated quality factor (Q) close to 250 at 34.6 GHz, with a power consumption of 354 ¿W and 500-mV supply voltage.
Keywords :
CMOS analogue integrated circuits; Q-factor; field effect MIMIC; inductors; low-power electronics; CMOS process; MOSFET; common drain configuration; equivalent input impedance; frequency 34.6 GHz; integrated transformer; low-power high-Q active inductor; millimeter-wave high-Q CMOS active inductor; power 354 muW; power consumption; quality factor; size 90 nm; voltage 500 mV; Active inductors; CMOS process; Equivalent circuits; Frequency; Impedance; Inductance; MOSFET circuits; Millimeter wave transistors; Q factor; Silicon;
Conference_Titel :
Research in Microelectronics and Electronics, 2009. PRIME 2009. Ph.D.
Conference_Location :
Cork
Print_ISBN :
978-1-4244-3733-7
Electronic_ISBN :
978-1-4244-3734-4
DOI :
10.1109/RME.2009.5201320
