Differential gain in 1.3-/spl mu/m InGaAsP/InP MQW lasers with p-doped active region

Author

Shterengas, L. ; Reynolds, C.L., Jr. ; Belenky, G. ; Hybertsen, M. ; Donetsky, D. ; Shtengel, G.

Author_Institution

State Univ. of New York, Stony Brook, NY, USA

fYear

2000

fDate

7-12 May 2000

Firstpage

174

Abstract

Summary form only given. We measured the temperature dependence of differential gain of 1.3-/spl mu/m InGaAsP-InP MQW FP and DFB lasers with the same design and two different doping profiles: moderately (2/spl middot/10/sup 17/ cm/sup -3/) and heavily (2/spl middot/10/sup 18/ cm/sup -3/) Zn doped active region. SIMS was applied to control doping levels. Differential gain values was obtained from corresponding RIN measurements. Experiments showed that the change of the active region doping level from 2/spl middot/10/sup 17/ cm/sup -3/ to 2/spl middot/10/sup 18/ cm/sup -3/ leads to a 50% increase of the differential gain for FP lasers at 25/spl deg/C.

Keywords

III-V semiconductors; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; infrared sources; laser transitions; quantum well lasers; semiconductor doping; 1.3 mum; InGaAsP-InP; InGaAsP-InP MQW FP lasers; InGaAsP/InP MQW lasers; RIN measurements; Zn doped active region; active region doping level; differential gain; doping level control; doping profiles; p-doped active region; Doping profiles; Gain measurement; Indium phosphide; Laser modes; Laser transitions; Optical design; Quantum well devices; Temperature dependence; Temperature measurement; Zinc;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2000. (CLEO 2000). Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

1-55752-634-6

Type

conf

DOI

10.1109/CLEO.2000.906875

Filename

906875