Title :
A new structure of acoustic charge transport devices using GaAs epitaxial films grown on Si substrates
Author :
Ohmori, K. ; Sato, K. ; Togura, K. ; Sugai, K. ; Minagawa, S.
fDate :
Oct. 31 1994-Nov. 3 1994
Abstract :
A new type of acoustic charge transport (ACT) devices was designed and fabricated using GaAs epitaxial films grown on Si substrates. A summary of the GaAs epitaxial growth process and fundamental properties of the film is given. The theoretical and experimental investigation on SAW properties of GaAs/Si structures is described. The first observation of SAW excitation and frequency response on the SAW resonator is presented. The characteristics of GaAs/Si ACT devices and the problems of the device configuration are discussed. The design improvements for future HACT/Si devices are proposed
Keywords :
III-V semiconductors; acoustic charge transport devices; frequency response; gallium arsenide; semiconductor epitaxial layers; semiconductor growth; silicon; surface acoustic wave resonators; vapour phase epitaxial growth; ACT devices; GaAs-Si; SAW properties; SAW resonator; Si; acoustic charge transport devices; device configuration; epitaxial films; epitaxial growth process; frequency response; Epitaxial growth; Gallium materials/devices; Semiconductor films; Semiconductor growth; Silicon materials/devices; Surface acoustic wave resonators;
Conference_Titel :
Ultrasonics Symposium, 1994. Proceedings., 1994 IEEE
Conference_Location :
Cannes, France
Print_ISBN :
0-7803-2012-3
DOI :
10.1109/ULTSYM.1994.401561
