Characterization of IN-IC integrable in-plane nanometer scale resonators fabricated by a silicon on nothing advanced CMOS technology

Author

Durand, C. ; Casset, F. ; Legrand, B. ; Faucher, M. ; Renaux, P. ; Mercier, D. ; Renaud, D. ; Dutartre, D. ; Ollier, E. ; Ancey, P. ; Buchaillot, L.

Author_Institution

Crolles, Grenoble

fYear

2008

fDate

13-17 Jan. 2008

Firstpage

1016

Lastpage

1019

Abstract

The paper reports on in-plane nanometer scale resonators fabricated on 8 inch industrial tools, with a process based on the advanced CMOS Front End Silicon On Nothing Technology. The aim is to propose totally integrated time reference functions realized by small size NEMS resonators. The measurement set-up, simulation and experimental results in the range of 100 MHz are presented. Environmental issues such as temperature and pressure influence on the resonator behavior are also investigated. Results are discussed and compared with analytic calculation, finite element and electrical simulations with good agreement. Work in progress focuses on improving the f.Q product, detection by the use of integrated MOSFET transistors, low voltage operation and in-IC integration.

Keywords

CMOS integrated circuits; finite element analysis; micromechanical resonators; nanotechnology; silicon; CMOS technology; NEMS resonators; electrical simulations; finite element analysis; in-IC integration; integrated MOSFET transistors; nanometer scale resonator fabrication; silicon; Analytical models; CMOS process; CMOS technology; Finite element methods; MOSFET circuits; Nanoelectromechanical systems; Paper technology; Silicon; Temperature; Textile industry;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro Electro Mechanical Systems, 2008. MEMS 2008. IEEE 21st International Conference on

Conference_Location

Tucson, AZ

ISSN

1084-6999

Print_ISBN

978-1-4244-1792-6

Electronic_ISBN

1084-6999

Type

conf

DOI

10.1109/MEMSYS.2008.4443831

Filename

4443831